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INTEGRATED CIRCUITS
DATA SHEET
TEA1112; TEA1112A Low voltage versatile telephone transmission circuits with dialler interface
Product specification Supersedes data of 1996 Feb 16 File under Integrated Circuits, IC03 1997 Mar 26
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuits with dialler interface
FEATURES * Low DC line voltage; operates down to 1.6 V (excluding polarity guard) * Voltage regulator with adjustable DC voltage * Provides a supply for external circuits * Symmetrical high impedance inputs (64 k) for dynamic, magnetic or piezo-electric microphones * Asymmetrical high impedance input (32 k) for electret microphones * DTMF input with confidence tone * Mute input for pulse or DTMF dialling (MUTE for TEA1112 and MUTE for TEA1112A) * Receiving amplifier for dynamic, magnetic or piezo-electric earpieces * AGC line loss compensation for microphone and earpiece amplifiers * LED on-hook/off-hook status indication * Microphone mute function (MMUTE for TEA1112 and MMUTE for TEA1112A). APPLICATION
TEA1112; TEA1112A
* Line powered telephone sets, cordless telephones, fax machines and answering machines. GENERAL DESCRIPTION The TEA1112; TEA1112A are bipolar integrated circuits that perform all speech and line interface functions required in fully electronic telephone sets. They perform electronic switching between speech and dialling. The ICs operate at a line voltage down to 1.6 V DC (with reduced performance) to facilitate the use of telephone sets connected in parallel. A current (proportional to the line current and internally limited to a typical value of 19.5 mA) is available to drive an LED which indicates the on-hook/off-hook status. The microphone amplifier can be disabled during speech condition by means of a microphone mute function. All statements and values refer to all versions unless otherwise specified.
QUICK REFERENCE DATA Iline = 15 mA; VEE = 0 V; RSLPE = 20 ; AGC pin connected to VEE; Zline = 600 ; f = 1 kHz; Tamb = 25 C; unless otherwise specified. SYMBOL Iline ILED(max) VLN ICC VCC Gvtrx PARAMETER line current operating range maximum supply current available DC line voltage internal current consumption supply voltage for peripherals typical voltage gain range microphone amplifier receiving amplifier Gvtrx gain control range for microphone and receiving amplifiers with respect to Iline = 15 mA microphone amplifier gain reduction VMIC = 2 mV (RMS) VIR = 6 mV (RMS) Iline = 85 mA 38.8 19.2 - - - 5.8 51.8 31.2 - dB dB dB VCC = 2.9 V Ip = 0 mA CONDITIONS normal operation with reduced performance Iline = 18 mA Iline > 76 mA MIN. 11 1 - - 3.35 - - TYP. - - 0.5 19.5 3.65 1.15 2.9 MAX. 140 11 - - 3.95 1.4 - UNIT mA mA mA mA V mA V
Gvtxm
-
80
-
dB
1997 Mar 26
2
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuits with dialler interface
ORDERING INFORMATION TYPE NUMBER TEA1112 TEA1112A TEA1112T TEA1112AT BLOCK DIAGRAM PACKAGE NAME DIP16 DIP16 SO16 SO16 DESCRIPTION plastic dual in-line package; 16 leads (300 mil) plastic dual in-line package; 16 leads (300 mil)
TEA1112; TEA1112A
VERSION SOT38-4 SOT38-4 SOT109-1 SOT109-1
plastic small outline package; 16 leads; body width 3.9 mm plastic small outline package; 16 leads; body width 3.9 mm
handbook, full pagewidth
GAR 15 IR 9
V- I
MUTE or QR MUTE 14 8 16 VCC
V- I
1 LN CURRENT REFERENCE
DTMF
7
ATT.
V- I
5 MIC 12 4
V- I
GAS REG
MIC
11
MMUTE or MMUTE
6
MICRO MUTE
AGC CIRCUIT
LOW VOLTAGE CIRCUIT
TEA1112 TEA1112A
LED DRIVER
13
10
3
2
MBE793
SLPE VEE AGC ILED
Fig.1 Block diagram.
1997 Mar 26
3
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuits with dialler interface
PINNING PIN SYMBOL TEA1112 LN SLPE ILED REG GAS MMUTE MMUTE DTMF MUTE MUTE IR AGC MIC- MIC+ VEE QR GAR VCC 1 2 3 4 5 6 - 7 8 - 9 10 11 12 13 14 15 16 TEA1112A 1 2 3 4 5 - 6 7 - 8 9 10 11 12 13 14 15 16 positive line terminal
TEA1112; TEA1112A
DESCRIPTION
slope (DC resistance) adjustment available output current to drive a LED line voltage regulator decoupling sending gain adjustment microphone mute input microphone mute input (active LOW) dual-tone multi-frequency input mute input to select speech or dialling mode mute input to select speech or dialling mode (active LOW) receiving amplifier input automatic gain control/line loss compensation inverting microphone amplifier input non-inverting microphone amplifier input negative line terminal receiving amplifier output receive gain adjustment supply voltage for speech circuit and peripherals
handbook, halfpage
handbook, halfpage
LN 1 SLPE 2 ILED 3 REG 4
16 VCC 15 GAR 14 QR 13 VEE 12 MIC+ 11 MIC- 10 AGC 9 IR
MBE791
LN 1 SLPE 2 ILED 3 REG 4
16 VCC 15 GAR 14 QR 13 VEE 12 MIC+ 11 MIC- 10 AGC 9 IR
MBE790
TEA1112
GAS 5 MMUTE 6 DTMF 7 MUTE 8
TEA1112A
GAS 5 MMUTE 6 DTMF 7 MUTE 8
Fig.2 Pin configuration (TEA1112).
Fig.3 Pin configuration (TEA1112A).
1997 Mar 26
4
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuits with dialler interface
FUNCTIONAL DESCRIPTION All data given in this chapter are typical values, except when otherwise specified. Supply (pins LN, SLPE, VCC and REG) The supply for the TEA1112; TEA1112A and their peripherals is obtained from the telephone line. The ICs generate a stabilized reference voltage (Vref) between pins LN and SLPE. This reference voltage is equal to 3.35 V, is temperature compensated and can be adjusted by means of an external resistor (RVA). It can be increased by connecting the RVA resistor between pins REG and SLPE (see Fig.5), or decreased by connecting the RVA resistor between pins REG and LN. The voltage at pin REG is used by the internal regulator to generate the stabilized reference voltage and is decoupled by a capacitor (CREG) which is connected to VEE. This capacitor, converted into an equivalent inductance (see Section "Set impedance"), realizes the set impedance conversion from its DC value (RSLPE) to its AC value (RCC in the audio-frequency range). The voltage at pin SLPE is proportional to the line current. Figure 4 illustrates the supply configuration. The ICs regulate the line voltage at pin LN, and can be calculated as follows: V LN = V ref + R SLPE x I SLPE I SLPE = I line - I CC - I p - I = I LED + I sh Where: Iline = line current
TEA1112; TEA1112A
ICC = current consumption of the IC Ip = supply current for peripheral circuits I* = current consumed between LN and VEE ILED = supply current for the LED component Ish = the excess line current shunted to SLPE (and VEE) via LN. The preferred value for RSLPE is 20 . Changing RSLPE will affect more than the DC characteristics; it also influences the microphone and DTMF gains, the LED supply current characteristic, the gain control characteristics, the sidetone level and the maximum output swing on the line. The internal circuitry of the TEA1112; TEA1112A is supplied from pin VCC. This voltage supply is derived from the line voltage by means of a resistor (RCC) and must be decoupled by a capacitor CVCC. It may also be used to supply peripheral circuits such as dialling or control circuits. The VCC voltage depends on the current consumed by the IC and the peripheral circuits as shown by the formula (see also Figs.6 and 7). RCCint is the internal impedance of the voltage supply point, and Irec is the current consumed by the output stage of the earpiece amplifier. V CC = V CC0 - R CCint x ( I p - I rec ) V CC0 = V LN - R CC x I CC
Rline
handbook, full pagewidth
RCC 619 ILED LN VCC from pre amp RGASint 69 k I* peripheral circuits Vd Rd SLPE ISLPE RSLPE 20 45.5 k REG CREG 4.7 F
MBE789
Iline
Rexch
TEA1112 TEA1112A
Ish ILED LED DRIVER
Rp 15.5 k
IP CVCC 100 F
ICC
Vexch
VEE
Fig.4 Supply configuration.
1997 Mar 26
5
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuits with dialler interface
TEA1112; TEA1112A
MGD176
handbook, halfpage
6.0
Vref (V)
For line currents higher than a threshold, ILEDstart, the ILED current increases proportionally to the line current (with a ratio of one third). The ILED current is internally limited to 19.5 mA (see Fig.9). If no LED device is used in the application, the ILED pin should be shorted to pin SLPE. I line - 17 For 17 mA < Iline < 77 mA: I LED = --------------------3 This LED driver is referenced to SLPE. Consequently, all the ILED supply current will flow through the RSLPE resistor. The AGC characteristics are not disturbed (see Fig.4).
5.0
4.0
Microphone amplifier (pins MIC+, MIC- and GAS)
(1) (2)
3.0 104
105
106
RVA ()
107
(1) Influence of RVA on Vref. (2) Vref without influence of RVA.
Fig.5 Reference voltage adjustment by RVA.
The TEA1112; TEA1112A have symmetrical microphone inputs. The input impedance between pins MIC+ and MIC- is 64 k (2 x 32 k). The voltage gain from pins MIC+/MIC- to pin LN is set at 51.8 dB (typ). The gain can be decreased by connecting an external resistor RGAS between pins GAS and REG. The adjustment range is 13 dB. A capacitor CGAS connected between pins GAS and REG can be used to provide a first-order low-pass filter. The cut-off frequency corresponds to the time constant CGAS x (RGASint // RGAS). RGASint is the internal resistor which sets the gain with a typical value of 69 k. Automatic gain control is provided on this amplifier for line loss compensation. Microphone mute (pin MMUTE; TEA1112) The microphone amplifier can be disabled by activating the microphone mute function. When MMUTE is LOW, the normal speech mode is entered, depending on the level on MUTE (see Table 1). When MMUTE is HIGH, the microphone amplifier inputs are disabled while the DTMF input is enabled (no confidence tone is provided). The voltage gain between LN and MIC+/MIC- is attenuated; the gain reduction is 80 dB (typ). Microphone mute (pin MMUTE; TEA1112A) The microphone amplifier can be disabled by activating the microphone mute function. When MMUTE is LOW, the microphone amplifier inputs are disabled while the DTMF input is enabled (no confidence tone is provided). The voltage gain between LN and MIC+/MIC- is attenuated; the gain reduction is 80 dB (typ). When MMUTE is HIGH, the normal speech mode is entered, depending on the level on MUTE (see Table 1).
The DC line current flowing into the set is determined by the exchange supply voltage (Vexch), the feeding bridge resistance (Rexch), the DC resistance of the telephone line (Rline) and the reference voltage (Vref). With line currents below 7.5 mA, the internal reference voltage (generating Vref) is automatically adjusted to a lower value. This means that more sets can operate in parallel with DC line voltages (excluding the polarity guard) down to an absolute minimum voltage of 1.6 V. At currents below 7.5 mA, the circuit has limited sending and receiving levels. This is called the low voltage area. Set impedance In the audio frequency range, the dynamic impedance is mainly determined by the RCC resistor. The equivalent impedance of the circuits is illustrated in Fig.8. LED supply (pin ILED) The TEA1112; TEA1112A give an on-hook/off-hook status indication. This is achieved by a current made available to drive an LED connected between pins ILED and LN. In the low voltage area, which corresponds to low line current conditions, no current is available for this LED.
1997 Mar 26
6
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuits with dialler interface
Receiving amplifier (pins IR, GAR and QR) The receiving amplifier has one input (IR) and one output (QR). The input impedance between pin IR and pin VEE is 20 k. The voltage gain from pin IR to pin QR is set at 31.2 dB (typ). The gain can be decreased by connecting an external resistor RGAR between pins GAR and QR; the adjustment range is 12 dB. Two external capacitors CGAR (connected between GAR and QR) and CGARS (connected between GAR and VEE) ensure stability. The CGAR capacitor provides a first-order low-pass filter. The cut-off frequency corresponds to the time constant CGAR x (RGARint // RGAR). RGARint is the internal resistor which sets the gain with a typical value of 100 k. The relationship CGARS = 10 x CGAR must be fulfilled to ensure stability. The output voltage of the receiving amplifier is specified for continuous wave drive. The maximum output swing depends on the DC line voltage, the RCC resistor, the ICC current consumption of the circuit, the Ip current consumption of the peripheral circuits and the load impedance. Automatic gain control is provided on this amplifier for line loss compensation. Automatic gain control (pin AGC) The TEA1112; TEA1112A perform automatic line loss compensation. The automatic gain control varies the gain of the microphone amplifier and the gain of the receiving amplifier in accordance with the DC line current. The control range is 5.8 dB (which corresponds approximately to a line length of 5 km for a 0.5 mm diameter twisted-pair copper cable with a DC resistance of 176 /km and an average attenuation of 1.2 dB/km). The ICs can be used with different configurations of feeding bridge (supply voltage and bridge resistance) by connecting an external resistor RAGC between pins AGC and VEE. This resistor enables the Istart and Istop line currents to be increased (the ratio between Istart and Istop is not affected by the resistor). The AGC function is disabled when pin AGC is left open-circuit.
TEA1112; TEA1112A
Mute function (pin MUTE; TEA1112) The mute function performs the switching action between the speech mode and the dialling mode. When MUTE is LOW or open-circuit, the microphone and receiving amplifiers inputs are enabled while the DTMF input is disabled, depending on the MMUTE level (see Table 1). When MUTE is HIGH, the DTMF input is enabled and the microphone and receiving amplifiers inputs are disabled. Mute function (pin MUTE; TEA1112A) The mute function performs the switching between the speech mode and the dialling mode. When MUTE is LOW or open-circuit, the DTMF input is enabled and the microphone and receiving amplifiers inputs are disabled. When MUTE is HIGH, the microphone and receiving amplifiers inputs are enabled while the DTMF input is disabled, depending on the MMUTE level (see Table 1). DTMF amplifier (pin DTMF) When the DTMF amplifier is enabled, dialling tones may be sent on line. These tones can be heard in the earpiece at a low level (confidence tone). The TEA1112; TEA1112A have an asymmetrical DTMF input. The input impedance between DTMF and VEE is 20 k. The voltage gain from pin DTMF to pin LN is 25.5 dB. When an external resistor is connected between pins REG and GAS to decrease the microphone gain, the DTMF gain varies in the same way (the DTMF gain is 26.3 dB lower than the microphone gain with no AGC control). The automatic gain control has no effect on the DTMF amplifier.
1997 Mar 26
7
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuits with dialler interface
TEA1112; TEA1112A
handbook, halfpage
2.5
MBE783
IP (mA) 2
handbook, halfpage
1.5
RCCint
VCC
1
VCCO (2) (1)
Irec
PERIPHERAL CIRCUIT
IP
0.5
MBE792
VEE 0 0 1 2 3 VCC (V) 4
(1) With RVA resistor. (2) Without RVA resistor.
Fig.6
Typical current Ip available from VCC for peripheral circuits at Iline = 15 mA.
Fig.7 VCC supply voltage for peripherals.
handbook, halfpage
100
MBE784
I (mA)
handbook, halfpage
LN RP REG CREG 4.7 F RCC 619
80
LEQ Vref
ISLPE
60
VCC CVCC
SLPE RSLPE 20 VEE 100 F
MBE788
40
Ish
20
ILED
0 0
LEQ = CREG x RSLPE x RP. RP = internal resistance. RP = 15.5 k.
20
40
60
80 100 Iline (mA)
Fig.8 Equivalent impedance between LN and VEE.
Fig.9 Available current to drive an LED.
1997 Mar 26
8
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuits with dialler interface
MUTE and MMUTE levels for different modes Table 1 Required MUTE and MMUTE levels to enable the different possible modes IC Mode Speech DTMF dialling Microphone mute SIDETONE SUPPRESSION The TEA1112; TEA1112A anti-sidetone network comprising RCC // Zline, Rast1, Rast2, Rast3, RSLPE and Zbal (see Fig.10) suppresses the transmitted signal in the earpiece. Maximum compensation is obtained when the following conditions are fulfilled: R SLPE x R ast1 = R CC x ( R ast2 + R ast3 ) ( R ast2 x ( R ast3 + R SLPE ) ) k = ---------------------------------------------------------------------( R ast1 x R SLPE ) Z bal = k x Z line The scale factor k is chosen to meet the compatibility with a standard capacitor from the E6 or E12 range for Zbal. In practice, Zline varies considerably with the line type and the line length. Therefore, the value chosen for Zbal should MUTE L H L TEA1112 MMUTE L X H
TEA1112; TEA1112A
TEA1112A MUTE H L H MMUTE H X L
be for an average line length which gives satisfactory sidetone suppression with short and long lines. The suppression also depends on the accuracy of the match between Zbal and the impedance of the average line. The anti-sidetone network for the TEA1112; TEA1112A (as shown in Fig.14) attenuates the receiving signal from the line by 32 dB before it enters the receiving amplifier. The attenuation is almost constant over the whole audio frequency range. A Wheatstone bridge configuration (see Fig.11) may also be used. More information on the balancing of an anti-sidetone bridge can be obtained in our publication "Applications Handbook for Wired Telecom Systems, IC03b", order number 9397 750 00811.
handbook, full pagewidth
LN
Zline
RCC
Rast1
VEE
Im
IR Zir Rast2
RSLPE Rast3 SLPE Zbal
MBE787
Fig.10 Equivalent circuit of TEA1112; TEA1112A family anti-sidetone bridge.
1997 Mar 26
9
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuits with dialler interface
TEA1112; TEA1112A
handbook, full pagewidth
LN
Zline
RCC
Zbal
VEE
Im
IR Zir
RSLPE
Rast1 RA SLPE
MBE786
Fig.11 Equivalent circuit of an anti-sidetone network in a Wheatstone bridge configuration.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VLN PARAMETER positive continuous line voltage repetitive line voltage during switch-on or line interruption Vn(max) Iline Ptot maximum voltage on pins ILED, SLPE maximum voltage on all other pins line current total power dissipation TEA1112; TEA1112A TEA1112T; TEA1112AT Tstg Tamb IC storage temperature operating ambient temperature RSLPE = 20 ; see Figs 12 and 13 Tamb = 75 C; see Figs 12 and 13 CONDITIONS MIN. VEE - 0.4 VEE - 0.4 VEE - 0.4 VEE - 0.4 - MAX. 12 13.2 VLN + 0.4 140 V V V mA UNIT
VCC + 0.4 V
- - -40 -25
625 416 +125 +75
mW mW C C
THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient in free air (TEA1112; TEA1112A) thermal resistance from junction to ambient in free air mounted on epoxy board 40.1 x 19.1 x 1.5 mm (TEA1112T; TEA1112AT) 1997 Mar 26 10 VALUE 80 130 UNIT K/W K/W
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuits with dialler interface
TEA1112; TEA1112A
handbook, halfpage
150
MBE782
Iline (mA)
(4) (3) (2) (1)
110
LINE (1) (2)
Tamb (C) 45 55 65 75
Ptot (W) 1.000 0.875 0.750 0.625
70
(3) (4)
30 2 4 6 8 10 12 VLN - VSLPE (V)
Fig.12 Safe operating area (TEA1112; TEA1112A).
MLC202
handbook, halfpage
150
I LN
(mA) 130
110 (1) 90 (2) 70 (3) (4) 50
LINE (1) (2) (3) (4)
Tamb (C) 45 55 65 75
Ptot (W) 0.666 0.583 0.500 0.416
30 2 4 6 8 10 12 V LN V SLPE (V)
Fig.13 Safe operating area (TEA1112T; TEA1112AT).
1997 Mar 26
11
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuits with dialler interface
TEA1112; TEA1112A
CHARACTERISTICS Iline = 15 mA; VEE = 0 V; RSLPE = 20 ; AGC pin connected to VEE; Zline = 600 ; f = 1 kHz; Tamb = 25 C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Supply (pins VLN, VCC, SLPE and REG) Vref VLN stabilized voltage between LN and SLPE DC line voltage Iline = 1 mA Iline = 4 mA Iline = 15 mA Iline = 140 mA VLN(exR) VLN(T) ICC VCC RCCint DC line voltage with an external resistor RVA DC line voltage variation with temperature referred to 25 C internal current consumption supply voltage for peripherals equivalent supply voltage impedance RVA(SLPE-REG) = 27 k Tamb = -25 to +75 C VCC = 2.9 V Ip = 0 mA Ip = 0.5 mA 3.1 - - 3.35 - - - - - - 3.35 1.6 2.45 3.65 - 4.4 30 1.15 2.9 550 3.6 - - 3.95 6.9 - - 1.4 - 620 V V V V V V mV mA V
LED supply (pin ILED) Iline(h) Iline(l) ILED(max) Zi highest line current for ILED < 0.5 mA lowest line current for maximum ILED maximum supply current available - - - 18 76 19.5 - - - mA mA mA
Microphone amplifier (pins MIC+, MIC- and GAS) input impedance differential between pins MIC+ and MIC- single-ended between pins MIC+/MIC- and VEE Gvtx Gvtx(f) Gvtx(T) CMRR Gvtxr voltage gain from MIC+/MIC- to LN gain variation with frequency referred to 1 kHz gain variation with temperature referred to 25 C common mode rejection ratio gain voltage reduction range external resistor connected between GAS and REG Iline = 15 mA; THD = 2% Iline = 4 mA; THD = 10% psophometrically weighted (P53 curve) VMIC = 2 mV (RMS) f = 300 to 3400 Hz Tamb = -25 to +75 C - - 50.6 - - - - 64 32 51.8 0.2 0.3 80 - - - 53 - - - 13 k k dB dB dB dB dB
VLN(max) Vnotx
maximum sending signal (RMS value) noise output voltage at pin LN; pins MIC+/ MIC- shorted through 200
1.4 - -
1.7 0.8 -70.5
- - -
V V dBmp
1997 Mar 26
12
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuits with dialler interface
SYMBOL Gvtxm VIL VIH IMMUTE Zi Gvrx Gvrx(f) Gvrx(T) Gvrxr PARAMETER CONDITIONS -
TEA1112; TEA1112A
MIN.
TYP. -
MAX.
UNIT
Microphone mute (pins MMUTE; TEA1112 and MMUTE; TEA1112A) gain reduction in microphone MUTE mode LOW level input voltage HIGH level input voltage input current input level = HIGH 80 dB
VEE - 0.4 - VEE + 1.5 - - - VIR = 6 mV (RMS) f = 300 to 3400 Hz Tamb = -25 to +75 C external resistor connected between GAR and QR Ip = 0 mA sine wave drive; RL = 150 ; THD = 2% Ip = 0 mA sine wave drive; RL = 450 ; THD = 2% 29.7 - - - 1.25
VEE + 0.3 V VCC + 0.4 V 3 - 32.7 - - 12 A
Receiving amplifier (pins IR, QR and GAR) input impedance voltage gain from IR to QR gain variation with frequency referred to 1 kHz gain variation with temperature referred to 25 C gain voltage reduction range 20 31.2 0.2 0.3 - k dB dB dB dB
Vo(rms)
maximum receiving signal (RMS value)
- - -
0.25 0.35 -86
- - -
V V dBVp
Vnorx(rms)
noise output voltage at pin QR (RMS IR open-circuit; value) RL = 150 ; psophometrically weighted (P53 curve)
Automatic gain control (pin AGC) Gvtrx gain control range for microphone and receiving amplifiers with respect to Iline = 15 mA highest line current for maximum gain Iline = 85 mA - 5.8 - dB
Istart
-
26
-
mA
1997 Mar 26
13
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuits with dialler interface
SYMBOL Istop Zi Gvdtmf PARAMETER lowest line current for minimum gain CONDITIONS - - VDTMF = 20 mV (RMS) 24.3
TEA1112; TEA1112A
MIN.
TYP. 61 - -
MAX.
UNIT mA
DTMF amplifier (pin DTMF) input impedance voltage gain from DTMF to LN in DTMF dialling or microphone MUTE mode gain variation with frequency referred to 1 kHz gain variation with temperature referred to 25 C voltage gain from DTMF to QR (confidence tone) 20 25.5 k dB 26.7
Gvdtmf(f) Gvdtmf(T) Gvct
f = 300 to 3400 Hz Tamb = -25 to +75 C VDTMF = 20 mV (RMS); RL = 150
- - -
0.2 0.4 -18
- - -
dB dB dB
Mute function (pins MUTE; TEA1112 and MUTE; TEA1112A) VIL VIH IMUTE Gtrxm LOW level input voltage HIGH level input voltage input current gain reduction for microphone and receiving amplifiers in DTMF dialling mode input level = HIGH VEE - 0.4 - VEE + 1.5 - - - 1.25 80 VEE + 0.3 V VCC + 0.4 V 3 - A dB
1997 Mar 26
14
andbook, full pagewidth
1997 Mar 26
Rast1 130 k CIR IR ILED QR CGAR 100 pF GAR MIC+ Rast2 3.92 k LN RCC 619
Philips Semiconductors
APPLICATION INFORMATION
Rprot 10
a/b
VDR 95 V
4x BAS11
Telephone line
TEA1112
VCC DTMF MUTE MIC- SLPE GAS REG CGAS CVCC 100 F 100 pF CREG 4.7 F MMUTE AGC VEE supply for peripheral circuits BC558
TEA1112A
Rpd4 470 k
Rpd5 470 k
CGARS 1 nF Rast3 390 Zbal RSLPE 20
Low voltage versatile telephone transmission circuits with dialler interface
15
BF473 Rpd1 470 k BC547 BZX79C18 Rpd2 470 k
b/a
BZV85C10
signal from dial and control circuits
Rpd6 BC547 68 k
PD input
BSN254
Rlimit
Rpd3 1 M
MGD177
3.9
TEA1112; TEA1112A
Product specification
Fig.14 Typical application of the TEA1112; TEA1112A in sets with Pulse Dialling or Flash facilities.
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuits with dialler interface
PACKAGE OUTLINES DIP16: plastic dual in-line package; 16 leads (300 mil)
TEA1112; TEA1112A
SOT38-4
D seating plane
ME
A2
A
L
A1
c Z e b1 b 16 9 b2 MH wM (e 1)
pin 1 index E
1
8
0
5 scale
10 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches A max. 4.2 0.17 A1 min. 0.51 0.020 A2 max. 3.2 0.13 b 1.73 1.30 0.068 0.051 b1 0.53 0.38 0.021 0.015 b2 1.25 0.85 0.049 0.033 c 0.36 0.23 0.014 0.009 D (1) 19.50 18.55 0.77 0.73 E (1) 6.48 6.20 0.26 0.24 e 2.54 0.10 e1 7.62 0.30 L 3.60 3.05 0.14 0.12 ME 8.25 7.80 0.32 0.31 MH 10.0 8.3 0.39 0.33 w 0.254 0.01 Z (1) max. 0.76 0.030
Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT38-4 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION
ISSUE DATE 92-11-17 95-01-14
1997 Mar 26
16
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuits with dialler interface
TEA1112; TEA1112A
SO16: plastic small outline package; 16 leads; body width 3.9 mm
SOT109-1
D
E
A X
c y HE vMA
Z 16 9
Q A2 A1 pin 1 index Lp 1 e bp 8 wM L detail X (A 3) A
0
2.5 scale
5 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches A max. 1.75 0.069 A1 0.25 0.10 A2 1.45 1.25 A3 0.25 0.01 bp 0.49 0.36 c 0.25 0.19 D (1) 10.0 9.8 E (1) 4.0 3.8 0.16 0.15 e 1.27 0.050 HE 6.2 5.8 L 1.05 Lp 1.0 0.4 0.039 0.016 Q 0.7 0.6 0.028 0.020 v 0.25 0.01 w 0.25 0.01 y 0.1 0.004 Z (1) 0.7 0.3 0.028 0.012
0.010 0.057 0.004 0.049
0.019 0.0100 0.39 0.014 0.0075 0.38
0.244 0.041 0.228
8 0o
o
Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT109-1 REFERENCES IEC 076E07S JEDEC MS-012AC EIAJ EUROPEAN PROJECTION
ISSUE DATE 95-01-23 97-05-22
1997 Mar 26
17
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuits with dialler interface
SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our "IC Package Databook" (order code 9398 652 90011). DIP SOLDERING BY DIPPING OR BY WAVE The maximum permissible temperature of the solder is 260 C; solder at this temperature must not be in contact with the joint for more than 5 seconds. The total contact time of successive solder waves must not exceed 5 seconds. The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (Tstg max). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. REPAIRING SOLDERED JOINTS Apply a low voltage soldering iron (less than 24 V) to the lead(s) of the package, below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 C, contact may be up to 5 seconds. SO REFLOW SOLDERING Reflow soldering techniques are suitable for all SO packages. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement.
TEA1112; TEA1112A
Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 C. WAVE SOLDERING Wave soldering techniques can be used for all SO packages if the following conditions are observed: * A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. * The longitudinal axis of the package footprint must be parallel to the solder flow. * The package footprint must incorporate solder thieves at the downstream end. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Maximum permissible solder temperature is 260 C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 C within 6 seconds. Typical dwell time is 4 seconds at 250 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. REPAIRING SOLDERED JOINTS Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C.
1997 Mar 26
18
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuits with dialler interface
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
TEA1112; TEA1112A
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1997 Mar 26
19
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997
Internet: http://www.semiconductors.philips.com
SCA53
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
417027/1200/03/pp20
Date of release: 1997 Mar 26
Document order number:
9397 750 01888

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